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2SA1062

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1062 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation ·Complement to Type 2SC2486 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=2...

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