2SA1060

isc Silicon PNP Power Transistor 2SA1060 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation ·Complement to Type 2SC2484 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1060 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -5V ICBO Collector Cutoff Current VCB= -80V ; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -0.02A ; VCE= -5V hFE-2 DC Current Gain IC= -1A ; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V MIN TYP. MAX UNIT -80 V -2.0 V -1.8 V -50 μA -50 μA 20 40 200 20 20 MHz  hFE-2 Classifications...