isc Silicon PNP Power Transistor
2SA1050
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: ...
isc Silicon
PNP Power
Transistor
2SA1050
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min.) ·Complement to Type 2SC2460 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifer and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
A
100
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -10V
hFE Classifications
R
O
Y
55-110 80-160 120-240
2SA1050
MIN TYP. MAX UNIT
-140
V
-140
V
-5
V
-2.0 V
-10 μA
-10 μA
55
240
70
MHz
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