2SA1008

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Fast Switching Speed ·Complement to Type 2SC2331 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -4.0 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@ TC=25℃ 15 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1008 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0A; IB= -0.1A, L=1mH VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= -1.0A; IB1=-IB2= -0.1A, VBE(OFF)=5.0V, L=180μH, clamped IC= -2A; IB1= -0.2A; IB2= 0.1A, VBE(OFF)= 5.0V, L= 180μH, clamped VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1...