2SA968A

www.DataSheet4U.net Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA968 2SA968A 2SA968B DESCRIPTION ·With TO-220 package ·Complement to type 2SC2238 ·High breakdown votage APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA968 VCBO Collector-base voltage 2SA968A Open emitter 2SA968B 2SA968 VCEO Collector-emitter voltage 2SA968A Open base 2SA968B VEBO Emitter-base voltage Open collector IC Collector current IE Emitter current PT Total power dissipation TC=25℃ Tj Junction temperature Tstg Storage temperature VALUE -160 -180 -200 -160 -180 -200 -5 -1.5 1.5 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2SA968 2SA968A 2SA968B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage 2SA968 2SA968A IC=-10mA; IB=0 2SA968B V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA VBE Base-emitter on voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain IC=-500mA ; VCE=-5V VCB=-160V ;IE=0 VEB=-5V; IC=0 IC=-100mA ; VCE=-5V Cob Output capacitance IE=0 ; VCB=-10V,f=1MH...