2SA907

isc Silicon PNP Power Transistor 2SA907 DESCRIPTION ·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1584 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V 2SA907 MIN TYP. MAX UNIT -100 V -3.0 V -1.0 mA -1.0 mA 30 10 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a ...