2SA882

isc Silicon PNP Power Transistor 2SA882 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -7 A 100 W 150 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -1.5A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V ICBO Collector Cutoff Current VCB= -130V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gain IC= -3A; VCE= -4V 2SA882 MIN TYP. MAX UNIT -130 V -1.0 V -3.0 V -1.6 V -0.1 mA -0.1 mA 40 20 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor...