2SA766

isc Silicon PNP Power Transistor 2SA766 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA766 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CER Collector-Emitter Breakdown Voltage IC= -0.2A; L= 25mH, RBE= 5kΩ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.0 V VBE(on)-1 Base-Emitter On Voltage IC= -0.1A; VCE= -5V -0.8 V VBE(on)-2 Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -30 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -5V 35 150 hFE-2 DC Current Gain IC= -0.5A; VCE= -5V 35 fT Current-Gain—Bandwidth Product IE= 0....