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2SA755

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA755 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.3V(Max.) @ IC= -1.5A ·Good Linearity of hFE ·Complement to Type 2SC1419 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequenc...

Inchange Semiconductor

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