isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -25V (Min) ·Good Linearity...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -25V (Min) ·Good Linearity of hFE ·Complement to Type 2SC1368 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as driver stages in high-fidelity amplifiers
and TV circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-25
V
VCEO Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2.5
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.0
A
8
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA738
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -500mA; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -500mA; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -50mA; VCE= -5V
2SA738
MIN TYP. MAX UNIT
-25
V
-0.5
V
-1.0
V
-1.0 μA
-1.0 μA
60
320
160
MHz
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