isc Silicon PNP Power Transistor
2SA656
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.) ·Com...
isc Silicon
PNP Power
Transistor
2SA656
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC519 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·Power switching applications. ·DC-DC converter applications. ·
Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-2
A
50
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V
2SA656
MIN TYP. MAX UNIT
-110
V
-2.0 V
-2.5 V
-0.1 mA
-5 mA
30
300
15
150
pF...