2SA633

www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION ·With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -5 -2 -3 -0.6 10 150 -55~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-0.1mA; IC=0 IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2 A B 2SA633 MIN -30 -5 TYP. MAX UNIT V V -1.0 -1.5 -1 -100 -1 20 80 60 250 V V μA μA μA VCB=-20V; IE=0 VCE=-12V; IB=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-5V MHz 2 Inchange Semiconduct...