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2SA627

PNP Transistor

Description

isc Silicon PNP Power Transistors 2SA627 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switchin...

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