isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min.) ·Low Collect...
isc Silicon
PNP Power
Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max.)@ IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~50 watts audio amplifier
and DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-70
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-10
A
60
W
150
℃
Tstg
Storage Temperature
-65~+150 ℃
2SA626
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE
DC Current Gain
IC= -2A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V
hFE Classifications
W
M
L
30-60 45-90 60-120
2SA626
MIN TYP. MAX UNIT
-1.5
V
-1.5
V
-0.1 mA
...