2SA1962

www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 130 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1962 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 360 pF fT Current-Gain...