2SA1940

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1940 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1940 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -4A ; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 260 pF fT Current-Ga...