isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1837
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1837
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-0.1
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150 ℃
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isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1837
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -500mA ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -230V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -100mA; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -100mA ; VCE= -10V
MIN TYP. MAX UNIT
-230
V
-1.5 V
-1.0...