2SA1535A

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A ·Good Linearity of hFE ·Complement to Type 2SC3944/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1535 -150 VCBO Collector-Base Voltage V 2SA1535A -180 2SA1535 -150 VCEO Collector-Emitter Voltage V 2SA1535A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IC Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -1.5 A 15 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1535/A isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SA1535/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage 2SA1535 2SA1535A IC= -50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA ICBO Collector Cutoff Current VCB= -150V ; IE= 0 hFE-1 DC Current Gain IC= -150mA ; VCE= -10V h...