isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1516
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1516
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.2
A
130
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SA1516
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-180
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A
-3.0 V
VBE(on)
Base-Emitter On Voltage
IC= -7A ; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -180V ; IE= 0
-5 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
180
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
35
COB
Output Capacitance
IE=0 ; VCB...