2SA1494

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1494 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1494 MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -200V ; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product VEB= -6V; IC= 0 IC= -8A ; VCE= -4V IE= 0 ; VCB= -10V;ftest= 1.0MHz IE= 1A ; VCE= -12V -200 V -2.5 V -100 μA -100 μA 50 180 500 pF 20 MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time hFE Classifications Y P G IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC...