SEMIX653GD176HDC

SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient UL recognised file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1700 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 450 A Tj = 125 °C Tj = 125 °C RG on = 3.6 Ω RG off = 3.6 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Eoff Tj = 125 °C Rth(j-c) per IGBT Values 1700 619 438 450 900 -20 ... 20 10 -55 ... 150 545 365 450 900 2900 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 2 2.45 V 2.45 2.9 V 1 1.2 V 0.9 1.1 V 2.2 2.8 mΩ 3.4 4.0 mΩ 5.2 5.8 6.4 V 3 mA mA 39.6 nF 1.65 nF 1.3...