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HRV103A
Silicon Schottky Barrier Diode for Rectifying
REJ03G0398-0100 Rev.1.00 Oct 12, 2004
Featur...
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HRV103A
Silicon
Schottky Barrier Diode for Rectifying
REJ03G0398-0100 Rev.1.00 Oct 12, 2004
Features
Low forward voltage drop and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRV103A Laser Mark S1 Package Code TURP
Pin Arrangement
Cathode mark Mark 1
S1
2 1. Cathode 2. Anode
Rev.1.00 Oct 12, 2004 page 1 of 5
HRV103A
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 2 IO * IFSM * Tj
1
Value 30 30 1 5 125
Unit V V A A °C °C
Storage temperature Tstg −55 to +125 Notes: 1. 10ms sine wave 1 pulse 2. Ta = 44°C, With Ceramics board (board size: 50mm × 50 mm, Land size 2mm × 2 mm) Short form wave (θ180°C), VR = 10 V.
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 Min Typ Max 0.27 0.36 0.42 100 1000 40 — µA pF °C/W Unit V Test Condition IF = 100 mA IF = 700 mA IF = 1 A, VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board * Glass epoxy board *
2
—
— — — — — — —
—
— — — — — 100 200
Reverse current Capacitance Thermal resistance
VF2 VF3 IR1 IR2 C
Rth(j-a)
Notes: 1. Ceramics board
2.0
0.5
2.0 0.3 2.0
50h×50w×0.8t
Unit: mm
1.0
2. Glass epoxy board
6.0
0.5
6.0 0.3 2.0
50h×50w×0.8t
Unit: mm
1.0
3. TURP is the structure which radiates heat ...