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HRV103A

Renesas Technology

Silicon Schottky Barrier Diode

www.DataSheet4U.net HRV103A Silicon Schottky Barrier Diode for Rectifying REJ03G0398-0100 Rev.1.00 Oct 12, 2004 Featur...


Renesas Technology

HRV103A

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www.DataSheet4U.net HRV103A Silicon Schottky Barrier Diode for Rectifying REJ03G0398-0100 Rev.1.00 Oct 12, 2004 Features Low forward voltage drop and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRV103A Laser Mark S1 Package Code TURP Pin Arrangement Cathode mark Mark 1 S1 2 1. Cathode 2. Anode Rev.1.00 Oct 12, 2004 page 1 of 5 HRV103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 2 IO * IFSM * Tj 1 Value 30 30 1 5 125 Unit V V A A °C °C Storage temperature Tstg −55 to +125 Notes: 1. 10ms sine wave 1 pulse 2. Ta = 44°C, With Ceramics board (board size: 50mm × 50 mm, Land size 2mm × 2 mm) Short form wave (θ180°C), VR = 10 V. Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 Min Typ Max 0.27 0.36 0.42 100 1000 40 — µA pF °C/W Unit V Test Condition IF = 100 mA IF = 700 mA IF = 1 A, VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board * Glass epoxy board * 2 — — — — — — — — — — — — — — 100 200 Reverse current Capacitance Thermal resistance VF2 VF3 IR1 IR2 C Rth(j-a) Notes: 1. Ceramics board 2.0 0.5 2.0 0.3 2.0 50h×50w×0.8t Unit: mm 1.0 2. Glass epoxy board 6.0 0.5 6.0 0.3 2.0 50h×50w×0.8t Unit: mm 1.0 3. TURP is the structure which radiates heat ...




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