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IGBT Module-Chopper
□ : CIRCUIT
200A, 600V
□ : OUTLINE DRAWING
94.0 80 ±0.25
PCHMB200E6
12.0 11.0 12.0 11.0 12.0
(C2E1) 1
(E2) 2
(C1) 3
48.0 16.0 14.0
2-Ø6.5 1 2 3
5(E1) 4(G1)
3-M5 23.0 23.0 17.0
5 4
14
9
14
9
14
4-fasten tab #110 t=0.5 21.2 7.5 7
30 +1.0 - 0 .5
LABEL
4
Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
600 ±20 200 400 780 -40~+150 -40~+125 2,500 3 ( 3 0 .6 ) 2 ( 2 0 .4 )
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V, VGE= 0V VGE= ±20V,VCE= 0V IC= 200A,VGE= 15V VCE= 5V,IC= 200mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= RL= RG= VGE= 300V 1.5Ω 3.6Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 10,000 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF
Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time
μs
□フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 200 400 Test Condition IF= 200A,VGE= 0V IF= 200A,VGE= -10V di/dt= 400A/μs Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A
DC 1ms
Unit V μs
□ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tcチップ) Min. - - Typ. - - Max. 0.16 0.38 Unit ℃/W
00
インター
PCHMB200E6
Fig.1- Output Characteristics (Typical)
400
Fig.2- Output Characteristics (Typical)
T C=25°C
400
T C=125°C VGE=20V 12V
VGE=20V
350 300 250 200 150 100 50 0
12V 11V
15V
350 300 250 200 150 100
15V 11V
Collector Current I C (A)
Collector Current I C (A)
10V
10V
9V
9V
8V 8V
50 0
0
1
2
3
4
5
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16 14 12 10 8 6 4 2 0
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
T C=25°C
16 14 12 10 8 6 4 2 0
T C=125°C IC=100A 200A 400A
IC=100A 200A
400A
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
16 14 30000 100000
RL =1.5( TC=25°C
Collector to Emitter Voltage V CE (V)
VGE=0V f=1MHZ T C=25°C Cies
Gate to Emitter Voltage VGE (V)
300 250 200 150 100 50 0
12 10
Capacitance C (pF)
10000
VCE =300V 200V 100V
8 6 4 2 0 800
3000
Coes Cres
1000
300
0
200
400
600
100 0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
00
インター
PCHMB200E6
Fig.7- Collector Current vs. Switching Time (Typical)
1
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10 5
0.8
tOFF
VCC=300V RG=3.6 ( VGE=±15V T C=25°C Resistive Load
2
VCC=300V IC=200A VGE=±15V T C=25°C Resistive Load
Switching Time t (µs)
Switching Time t (µs)
0.6
1 0.5
tf
0.4
toff ton tr(V CE) tf
0.2 0.1 0.05
0.2
tON tr(VCE)
0
0
50
100
150
200
250
300
0.02
1
3
10
30
100
Collector Current IC (A)
Series Gate Impedance RG (( )
Fig.9- Collector Current vs. Switching Time
10
Fig.10- Series Gate Impedance vs. Switching Time
10 5
1
Switching Time t (µs)
Switching Time t (µs)
tOFF tON
VCC=300V RG=3.6( VGE=±15V T C=125°C Inductive Load
2 1 0.5
VCC=300V IC=200A VGE=±15V T C=125°C Inductive Load
0.1
tf tr(Ic)
toff ton tf
0.2 0.1 0.05
0.01
tr(IC )
0.001 0 50 100 150 200 250 300 0.02 1 3 10 30 100
Collector Current IC (A)
Series Gate Impedance RG (( )
Fig.11- Collector Current vs. Switching Loss
20
Fig.12- Series Gate Impedance vs. Switching Loss
300
Switching Loss ESW (mJ/Pulse)
EOFF
12
Switching Loss ESW (mJ/Pulse)
16
VCC=300V RG=3.6( VGE=±15V T C=125°C Inductive Load
100
VCC=300V IC=200A VGE=±15V T C=125°C Inductive Load
EON
30
EOFF
EON
8
10
ERR
4
ERR
3
0
0
50
100
150
200
250
300
1
1
3
10
30
Collector Current IC (A)
Series Gate Impedance RG (( )
00
インター
PCHMB200E6
400 350 300 250 200 150 100 50 0
Fig.13- Forward Characteristics of Free Wheeling Diode (Typical)
T C=25°C T C=125°C
Fig.