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PCHMB200E6 Dataheets PDF



Part Number PCHMB200E6
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description IGBT MODULE
Datasheet PCHMB200E6 DatasheetPCHMB200E6 Datasheet (PDF)

www.DataSheet4U.net IGBT Module-Chopper □ : CIRCUIT 200A, 600V □ : OUTLINE DRAWING 94.0 80 ±0.25 PCHMB200E6 12.0 11.0 12.0 11.0 12.0 (C2E1) 1 (E2) 2 (C1) 3 48.0 16.0 14.0 2-Ø6.5 1 2 3 5(E1) 4(G1) 3-M5 23.0 23.0 17.0 5 4 14 9 14 9 14 4-fasten tab #110 t=0.5 21.2 7.5 7 30 +1.0 - 0 .5 LABEL 4 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power .

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www.DataSheet4U.net IGBT Module-Chopper □ : CIRCUIT 200A, 600V □ : OUTLINE DRAWING 94.0 80 ±0.25 PCHMB200E6 12.0 11.0 12.0 11.0 12.0 (C2E1) 1 (E2) 2 (C1) 3 48.0 16.0 14.0 2-Ø6.5 1 2 3 5(E1) 4(G1) 3-M5 23.0 23.0 17.0 5 4 14 9 14 9 14 4-fasten tab #110 t=0.5 21.2 7.5 7 30 +1.0 - 0 .5 LABEL 4 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm) 600 ±20 200 400 780 -40~+150 -40~+125 2,500 3 ( 3 0 .6 ) 2 ( 2 0 .4 ) : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V, VGE= 0V VGE= ±20V,VCE= 0V IC= 200A,VGE= 15V VCE= 5V,IC= 200mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= RL= RG= VGE= 300V 1.5Ω 3.6Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 10,000 0.15 0.25 0.10 0.35 Max. 1.0 1.0 2.6 8.0 - 0.30 0.40 0.35 0.70 Unit mA μA V V pF Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time μs □フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 200 400 Test Condition IF= 200A,VGE= 0V IF= 200A,VGE= -10V di/dt= 400A/μs Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A DC 1ms Unit V μs □ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tcチップ) Min. - - Typ. - - Max. 0.16 0.38 Unit ℃/W 00 インター PCHMB200E6 Fig.1- Output Characteristics (Typical) 400 Fig.2- Output Characteristics (Typical) T C=25°C 400 T C=125°C VGE=20V 12V VGE=20V 350 300 250 200 150 100 50 0 12V 11V 15V 350 300 250 200 150 100 15V 11V Collector Current I C (A) Collector Current I C (A) 10V 10V 9V 9V 8V 8V 50 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25°C 16 14 12 10 8 6 4 2 0 T C=125°C IC=100A 200A 400A IC=100A 200A 400A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 30000 100000 RL =1.5( TC=25°C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ T C=25°C Cies Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 10000 VCE =300V 200V 100V 8 6 4 2 0 800 3000 Coes Cres 1000 300 0 200 400 600 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 インター PCHMB200E6 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=3.6 ( VGE=±15V T C=25°C Resistive Load 2 VCC=300V IC=200A VGE=±15V T C=25°C Resistive Load Switching Time t (µs) Switching Time t (µs) 0.6 1 0.5 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 50 100 150 200 250 300 0.02 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG (( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (µs) Switching Time t (µs) tOFF tON VCC=300V RG=3.6( VGE=±15V T C=125°C Inductive Load 2 1 0.5 VCC=300V IC=200A VGE=±15V T C=125°C Inductive Load 0.1 tf tr(Ic) toff ton tf 0.2 0.1 0.05 0.01 tr(IC ) 0.001 0 50 100 150 200 250 300 0.02 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss 20 Fig.12- Series Gate Impedance vs. Switching Loss 300 Switching Loss ESW (mJ/Pulse) EOFF 12 Switching Loss ESW (mJ/Pulse) 16 VCC=300V RG=3.6( VGE=±15V T C=125°C Inductive Load 100 VCC=300V IC=200A VGE=±15V T C=125°C Inductive Load EON 30 EOFF EON 8 10 ERR 4 ERR 3 0 0 50 100 150 200 250 300 1 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG (( ) 00 インター PCHMB200E6 400 350 300 250 200 150 100 50 0 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25°C T C=125°C Fig.


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