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IGBT Module-Chopper
□ : CIRCUIT
400A, 600V
□ : OUTLINE DRAWING
3-M6 108 93 ± 0 .2 5 14 11 14 11 14
PCHMB400E6
4-Ø 6.5
62 11 13 20
5(E1) 4(G1)
5 4
25
16 9 16
25
9 16
24
30 +1.0 - 0.5
7
23
LABEL
8
6
48 ± 0 .2 5
(C2E1) 1
(E2) 2
(C1) 3
1
2
3
Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm)
600 ±20 400 800 1470 -40~+150 -40~+125 2,500 3(30.6)
: ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V,VGE= 0V VGE= ±20V,VCE= 0V IC= 400A,VGE= 15V VCE= 5V,IC= 400mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= R L= R G= VGE= 300V 0.75Ω 3.0Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 20,000 0.15 0.30 0.10 0.40 Max. 1.0 1.0 2.6 8.0 - 0.35 0.85 0.25 0.80 Unit mA μA V V pF
Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time
μs
□フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time
WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃)
Symbol IF IFM Symbol VF trr Rated Value 400 800 Test Condition IF= 400A,VGE= 0V IF= 400A,VGE= -10V di/dt= 800A/μs Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A
DC 1ms
Unit V μs
□ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tcチップ) Min. - - Typ. - - Max. 0 .0 8 5 0.20 Unit ℃/W
00
インター
PCHMB400E6
Fig.1- Output Characteristics (Typical)
800
Fig.2- Output Characteristics (Typical)
T C=25°C
800
T C=125°C VGE=20V 12V
VGE=20V
700 600 500 400 300 200 100 0
12V 11V
15V
700 600 500 400 300 200
15V 11V
Collector Current I C (A)
Collector Current I C (A)
10V
10V
9V
9V
8V 8V
100 0
0
1
2
3
4
5
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16 14 12 10 8 6 4 2 0
Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
T C=25°C
16 14 12 10 8 6 4 2 0
T C=125°C IC=200A 400A 800A
IC=200A 400A
800A
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Collector to Emitter Voltage V CE (V)
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
16 14 300000
RL =0.75( TC=25°C
Collector to Emitter Voltage V CE (V)
100000
VGE=0V f=1MHZ T C=25°C
Gate to Emitter Voltage VGE (V)
300 250 200 150 100 50 0
12 10
Capacitance C (pF)
30000
Cies
VCE =300V 200V 100V
8 6 4 2 0 1600
10000
Coes Cres
3000
1000
0
200
400
600
800
1000
1200
1400
300 0.1
0.2
0.5
1
2
5
10
20
50
100
200
Total Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
00
インター
PCHMB400E6
Fig.7- Collector Current vs. Switching Time (Typical)
1
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10 5
0.8
tOFF
VCC=300V RG=3.0 ( VGE=±15V T C=25°C Resistive Load
2
VCC=300V IC=400A VGE=±15V T C=25°C Resistive Load
Switching Time t (µs)
Switching Time t (µs)
0.6
1 0.5
tf
0.4
toff ton tr(V CE) tf
0.2 0.1 0.05
0.2
tON tr(VCE)
0
0
100
200
300
400
500
600
0.02
1
3
10
30
Collector Current IC (A)
Series Gate Impedance RG (( )
Fig.9- Collector Current vs. Switching Time
10
Fig.10- Series Gate Impedance vs. Switching Time
10 5
1
Switching Time t (µs)
Switching Time t (µs)
tOFF tON
VCC=300V RG=3.0( VGE=±15V T C=125°C Inductive Load
2 1 0.5
VCC=300V IC=400A VGE=±15V T C=125°C Inductive Load
0.1
tf tr(Ic)
toff ton tf tr(IC )
1 3 10 30
0.2 0.1 0.05
0.01
0.001
0
100
200
300
400
500
600
0.02
Collector Current IC (A)
Series Gate Impedance RG (( )
Fig.11- Collector Current vs. Switching Loss
40 1000
Fig.12- Series Gate Impedance vs. Switching Loss
VCC=300V IC=400A VGE=±15V T C=125°C Inductive Load
Switching Loss ESW (mJ/Pulse)
30
Switching Loss ESW (mJ/Pulse)
VCC=300V RG=3.0 ( VGE=±15V T C=125°C Inductive Load
EOFF
300
100
EON EOFF ERR
EON
20
30
ERR
10
10
3
0
0
100
200
300
400
500
600
1
1
3
10
30
Collector Current IC (A)
Series Gate Impedance RG (( )
00
インター
PCHMB400E6
800
Fig.13- Forward Characteristics of Free Wheeling Diode (Typical)
T C=25°C T C=125°C
Fig.14- Reverse Recovery Characteri.