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PCHMB400E6 Dataheets PDF



Part Number PCHMB400E6
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description IGBT MODULE
Datasheet PCHMB400E6 DatasheetPCHMB400E6 Datasheet (PDF)

www.DataSheet4U.net IGBT Module-Chopper □ : CIRCUIT 400A, 600V □ : OUTLINE DRAWING 3-M6 108 93 ± 0 .2 5 14 11 14 11 14 PCHMB400E6 4-Ø 6.5 62 11 13 20 5(E1) 4(G1) 5 4 25 16 9 16 25 9 16 24 30 +1.0 - 0.5 7 23 LABEL 8 6 48 ± 0 .2 5 (C2E1) 1 (E2) 2 (C1) 3 1 2 3 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temp.

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www.DataSheet4U.net IGBT Module-Chopper □ : CIRCUIT 400A, 600V □ : OUTLINE DRAWING 3-M6 108 93 ± 0 .2 5 14 11 14 11 14 PCHMB400E6 4-Ø 6.5 62 11 13 20 5(E1) 4(G1) 5 4 25 16 9 16 25 9 16 24 30 +1.0 - 0.5 7 23 LABEL 8 6 48 ± 0 .2 5 (C2E1) 1 (E2) 2 (C1) 3 1 2 3 Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item コレクタ・エミッタ Collector-Emitter Voltage ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage コ レ ク タ Collector Current コ レ ク タ Collector Power Dissipation Junction Temperature Range Storage Temperature Range (Terminal to Base AC,1minute) Isolation Voltage Module Base to Heatsink め け ト ル ク Mounting Torque Busbar to Main Terminal □ DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg VISO Ftor Rated Value Unit V V A W ℃ ℃ V(RMS) N・m (kgf・cm) 600 ±20 400 800 1470 -40~+150 -40~+125 2,500 3(30.6) : ELECTRICAL CHARACTERISTICS (TC=25℃) Symbol ICES IGES VCE(sat) VGE(th) Cies ターンオン ターンオフ Rise Turn-on Fall Turn-off Time Time Time Time tr ton tf toff Test Condition VCE= 600V,VGE= 0V VGE= ±20V,VCE= 0V IC= 400A,VGE= 15V VCE= 5V,IC= 400mA VCE= 10V,VGE= 0V,f= 1MHZ VCC= R L= R G= VGE= 300V 0.75Ω 3.0Ω ±15V Min. - - - 4.0 - - - - - Typ. - - 2.1 - 20,000 0.15 0.30 0.10 0.40 Max. 1.0 1.0 2.6 8.0 - 0.35 0.85 0.25 0.80 Unit mA μA V V pF Characteristic コ レ ク タ Collector-Emitter Cut-Off Current ゲ ー ト れ Gate-Emitter Leakage Current コレクタ・エミッタ Collector-Emitter Saturation Voltage ゲ ー ト し き い Gate-Emitter Threshold Voltage Input Capacitance スイッチング Switching Time μs □フリーホイーリングダイオードの : FREE Item Forward Current Characteristic Peak Forward Voltage Reverse Recovery Time WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Symbol IF IFM Symbol VF trr Rated Value 400 800 Test Condition IF= 400A,VGE= 0V IF= 400A,VGE= -10V di/dt= 800A/μs Min. - - Typ. 1.9 0.15 Max. 2.4 0.25 Unit A DC 1ms Unit V μs □ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case (Tcチップ) Min. - - Typ. - - Max. 0 .0 8 5 0.20 Unit ℃/W 00 インター PCHMB400E6 Fig.1- Output Characteristics (Typical) 800 Fig.2- Output Characteristics (Typical) T C=25°C 800 T C=125°C VGE=20V 12V VGE=20V 700 600 500 400 300 200 100 0 12V 11V 15V 700 600 500 400 300 200 15V 11V Collector Current I C (A) Collector Current I C (A) 10V 10V 9V 9V 8V 8V 100 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25°C 16 14 12 10 8 6 4 2 0 T C=125°C IC=200A 400A 800A IC=200A 400A 800A Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 300000 RL =0.75( TC=25°C Collector to Emitter Voltage V CE (V) 100000 VGE=0V f=1MHZ T C=25°C Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 30000 Cies VCE =300V 200V 100V 8 6 4 2 0 1600 10000 Coes Cres 3000 1000 0 200 400 600 800 1000 1200 1400 300 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 インター PCHMB400E6 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=3.0 ( VGE=±15V T C=25°C Resistive Load 2 VCC=300V IC=400A VGE=±15V T C=25°C Resistive Load Switching Time t (µs) Switching Time t (µs) 0.6 1 0.5 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 100 200 300 400 500 600 0.02 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG (( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (µs) Switching Time t (µs) tOFF tON VCC=300V RG=3.0( VGE=±15V T C=125°C Inductive Load 2 1 0.5 VCC=300V IC=400A VGE=±15V T C=125°C Inductive Load 0.1 tf tr(Ic) toff ton tf tr(IC ) 1 3 10 30 0.2 0.1 0.05 0.01 0.001 0 100 200 300 400 500 600 0.02 Collector Current IC (A) Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss 40 1000 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=400A VGE=±15V T C=125°C Inductive Load Switching Loss ESW (mJ/Pulse) 30 Switching Loss ESW (mJ/Pulse) VCC=300V RG=3.0 ( VGE=±15V T C=125°C Inductive Load EOFF 300 100 EON EOFF ERR EON 20 30 ERR 10 10 3 0 0 100 200 300 400 500 600 1 1 3 10 30 Collector Current IC (A) Series Gate Impedance RG (( ) 00 インター PCHMB400E6 800 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25°C T C=125°C Fig.14- Reverse Recovery Characteri.


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