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IPB081N06L3G Dataheets PDF



Part Number IPB081N06L3G
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB081N06L3G DatasheetIPB081N06L3G Datasheet (PDF)

Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.1 mΩ 50 A Type IPB081N06L3 G IPP084N.

  IPB081N06L3G   IPB081N06L3G



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Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.1 mΩ 50 A Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Package Marking PG-TO263-3 081N06L PG-TO220-3 084N06L PG-TO262-3 084N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature I D T C=25 °C2) T C=100 °C I D,pulse T C=25 °C E AS I D=50 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg 1)J-STD20 and JESD22.


SSM2377 IPB081N06L3G IPP081N06L3G


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