IPB107N20N3G

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification 200 V 10.7 mW 88 A Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse E AS I D=80 A, R GS=25 W Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation Operating and storage temperature ...