Power Transistors
2SB0928 (2SB928), 2SB0928A (2SB928A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For Power...
Power
Transistors
2SB0928 (2SB928), 2SB0928A (2SB928A)
www.DataSheet4U.net
Silicon
PNP epitaxial planar type
For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A ■ Features
High collector-emitter voltage (Base open) VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
Unit : mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
10.0±0.3 1.5±0.1
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0928 (Base open) 2SB0928A VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO VCEO Rating −200 −150 −180 −6 −2 −3 30 1.3 150 −55 ∼ +150 °C °C V A A W Unit V V
(6.5)
1 : Base 2 : Collector 3 : Emitter N-G1 Package
Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Note) Self-supported type package is also prepared
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0928 2SB0928A VEBO ICBO IEBO hFE1 * hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency VBE VCE(sat) fT IE = −500 µA, IC = 0 VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −400 mA VCE = −10 V, IC = −400 mA IC = −500 mA, IB = −50 mA VCE = −10 V, IC = − 0.5 A, f = 10 MH...