2SB0929A

Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A 8.5±0.2 Unit: mm 3.4±0.3 1.0±0.1 6.0±0.2 10.0±0.3 1.5±0.1 ■ Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Rating −60 −80 −60 −80 −5 −3 −5 35 1.3 150 −55 to +150 Unit V 1 2 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0929 (Base open) 2SB0929A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V (6.5) V A A W °C °C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB0929 2SB0929A 2SB0929 2SB0929A 2SB0929 2SB0929A IEBO hFE1 * Symbol VCEO ICES ICEO Conditions IC = −30 mA, IB = 0 VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VCE = −60 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4...