Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For power...
Power
Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
www.DataSheet4U.net
Silicon
PNP epitaxial planar type
For power amplification Complementary to 2SD1252, 2SD1252A
8.5±0.2
Unit: mm
3.4±0.3 1.0±0.1 6.0±0.2
10.0±0.3 1.5±0.1
■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SB0929 2SB0929A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating −60 −80 −60 −80 −5 −3 −5 35 1.3 150 −55 to +150
Unit V
1 2
2.0±0.5
■ Absolute Maximum Ratings TC = 25°C
Collector-emitter voltage 2SB0929 (Base open) 2SB0929A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
V
(6.5)
V A A W °C °C
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature Storage temperature
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB0929 2SB0929A 2SB0929 2SB0929A 2SB0929 2SB0929A IEBO hFE1
*
Symbol VCEO ICES ICEO
Conditions IC = −30 mA, IB = 0 VCE = −60 V, VBE = 0 VCE = −80 V, VBE = 0 VCE = −30 V, IB = 0 VCE = −60 V, IB = 0 VEB = −5 V, IC = 0 VCE = −4 V, IC = −1 A VCE = −4...