2SB0932

Power Transistors 2SB0932 (2SB932) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 Unit: mm Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 ■ Features 4.4±0.5 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −130 −80 −7 −4 −8 35 1.3 150 −55 to +150 Unit V (6.5) V V A A W °C °C 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE(sat) VCE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −1 A IC = −3 A, IB = − 0.15 A IC = −3 A, IB = − 0.15 A VCE ...