Document
Power Transistors
2SB0934 (2SB934)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For Power switching Complementary to 2SD1257 ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit: mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −7 −15 40 1.3 150 −55 to +150 °C °C Unit V V V A A W
(6.5)
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE(sat) VCE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −3 A IC = −5 A, IB = − 0.25 A IC = −5 A, IB = − 0.25 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A VCC = −50 V 30 0.5 1.5 0.1 45 90 260 −1.5 − 0.5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003 SJD00016BED
(7.6)
(1.5)
1
2
0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3
2.0±0.5
4.4±0.5
0 to 0.4
14.4±0.5
3.0+0.4 –0.2
1.5+0 –0.4
1
2SB0934
PC Ta
50 −2.0
(1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) TC=25˚C IB=–120mA –110mA –100mA –90mA –80mA –70mA –60mA –40mA –30mA –20mA –10mA
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
−100
VCE(sat) IC
IC/IB=20
Collector power dissipation PC (W)
40 (1) 30
−1.6
Collector current IC (A)
−10
−1.2
−1
20
− 0.8
TC=100˚C –25˚C 25˚C
10 (2) (3) 0 0 40 80 120 160
− 0.4
− 0.1
0
0
−2
−4
−6
−8
−10
− 0.01 − 0.1
−1
−10
−100
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
−100
IC/IB=20
hFE IC
104
VCE=–2V
fT I C
104
VCE=–10V f=10MHz TC=25˚C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
−10
Transition frequency fT (MHz)
103
25˚C TC=100˚C
103
−1
TC=–25˚C 100˚C 25˚C
102
–25˚C
102
− 0.1
10
10
− 0.01 − 0.01
− 0.1
−1
−10
1 − 0.1
−1
−10
−100
1 − 0.01
− 0.1
−1
−10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Turn-on time ton , Storage time tstg , Fall time tf (µs)
ton, tstg, tf IC
100
IE=0 f=1MHz TC=25˚C
Safe operation area
−100
Non repetitive pulse TC=25˚C ICP
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
Collector current IC (A)
103
10
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C
−10
IC t=10ms
t=0.5ms
t=1ms
102
1
tstg
−1
t=300ms
10
0.1
ton tf
− 0.1
1 − 0.1
−1
−10
−100
0.01
0
−2
−4
−6
−8
− 0.01 −1
−10
−100
−1 000
Collector-base voltage VCB (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00016BED
2SB0934
Rth - t
103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) (2) 10
Thermal resistance Rth (°C/W)
102
1
10−1
10−2 10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
SJD00016BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used .