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2SB936A Dataheets PDF



Part Number 2SB936A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SB936A Datasheet2SB936A Datasheet (PDF)

Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0936 2SB0936A Symbol VCBO .

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Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0936 2SB0936A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −40 −50 −20 −40 −5 −10 −20 40 1.3 150 −55 to +150 Unit V 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0936 (Base open) 2SB0936A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V (6.5) V A A W °C °C 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared. Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0936 2SB0936A 2SB0936 2SB0936A IEBO hFE1 * hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time ton tstg tf IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A VCC = −20 V 0.1 0.5 0.1 µs µs µs VBE(sat) VCE(sat) fT Cob ICBO VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −3 A IC = −10 A, IB = − 0.33 A IC = −10 A, IB = − 0.33 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz VCB = −10 V, IE = 0, f = 1 MHz 100 400 45 90 260 −1.5 − 0.6 V V MHz pF Symbol VCEO Conditions IC = −10 mA, IB = 0 Min −20 −40 −50 −50 −50 µA  µA Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Publication date: April 2003 Q 90 to 180 P 130 to 260 Note) The part number in the parenthesis shows conventional part number. SJD00017BED (7.6) (1.5) 1 2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 4.4±0.5 0 to 0.4 14.4±0.5 3.0+0.4 –0.2 1.5+0 –0.4 1 2SB0936, 2SB0936A PC  Ta 50 −12 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) IB=–100mA –80mA –60mA –50mA –40mA IC  VCE Collector-emitter saturation voltage VCE(sat) (V) −10 TC=25˚C VCE(sat)  IC IC/IB=30 Collector power dissipation PC (W) 40 (1) −10 Collector current IC (A) −8 –35mA –30mA –25mA −1 TC=100˚C 25˚C –25˚C 30 −6 20 −4 –20mA –15mA − 0.1 10 (2) (3) 0 0 40 80 120 160 −2 –10mA –5mA 0 0 −2 −4 −6 −8 −10 −12 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC −10 IC/IB=30 hFE  IC 104 VCE=–2V fT  I C 104 VCE=–10V f=10MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 103 TC=100˚C 25˚C Transition frequency fT (MHz) −10 −100 103 −1 TC=–25˚C 100˚C 25˚C 102 –25˚C 102 − 0.1 10 10 − 0.01 − 0.1 −1 −10 1 − 0.1 −1 1 –0.01 –0.1 –1 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob  VCB Turn-on time ton , Storage time tstg , Fall time tf (µs) ton, tstg, tf  IC 10 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C IE=0 f=1MHz TC=25˚C Safe operation area −100 ICP Non repetitive pulse TC=25˚C t=1ms IC t=10ms t=300ms Collector output capacitance C (pF) (Common base, input open circuited) ob 104 1 tstg Collector current IC (A) 103 −10 102 −1 ton 0.1 tf 10 − 0.1 2SB0936A 2SB0936 1 − 0.1 −1 −10 −100 0.01 0 −2 −4 −6 −8 − 0.01 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00017BED 2SB0936, 2SB0936A Rth  t 103 (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) (2) 10 Thermal resistance Rth (°C/W) 102 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00017BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party.


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