2SB0938A

Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features High forward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0938 2SB0938A VCEO VEBO IC ICP PC Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 °C °C V A A W V Unit V (6.5) Collector-emitter voltage 2SB0938 (Base open) 2SB0938A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. Internal Connection C B ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0938 2SB0938A 2SB0938 2SB09378 IEBO hFE1 hFE2 * Collector-emitter saturation voltage VCE(sat) fT ton tstg tf ICEO 2SB0938 2SB0938A VBE ICBO VCE = −3 V,IC = −3 A VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VCE = −30 V,IB = 0 VCE = −40 V,IB = 0 VEB = −5 V,IC = 0 VC...