Power Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
www.DataSheet4U.net
Silicon PNP epitaxial planar type Darlingto...
Power
Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
www.DataSheet4U.net
Silicon
PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features
High forward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit: mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0938 2SB0938A VCEO VEBO IC ICP PC Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 °C °C V A A W V Unit V
(6.5)
Collector-emitter voltage 2SB0938 (Base open) 2SB0938A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C B
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0938 2SB0938A 2SB0938 2SB09378 IEBO hFE1 hFE2 * Collector-emitter saturation voltage VCE(sat) fT ton tstg tf ICEO 2SB0938 2SB0938A VBE ICBO VCE = −3 V,IC = −3 A VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VCE = −30 V,IB = 0 VCE = −40 V,IB = 0 VEB = −5 V,IC = 0 VC...