Document
Power Transistors
2SB0938 (2SB938), 2SB0938A (2SB938A)
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Silicon PNP epitaxial planar type Darlington
For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features
• High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit: mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB0938 2SB0938A VCEO VEBO IC ICP PC Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 °C °C V A A W V Unit V
(6.5)
Collector-emitter voltage 2SB0938 (Base open) 2SB0938A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C B
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0938 2SB0938A 2SB0938 2SB09378 IEBO hFE1 hFE2 * Collector-emitter saturation voltage VCE(sat) fT ton tstg tf ICEO 2SB0938 2SB0938A VBE ICBO VCE = −3 V,IC = −3 A VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VCE = −30 V,IB = 0 VCE = −40 V,IB = 0 VEB = −5 V,IC = 0 VCE = −3 V, IC = −0.5 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA Transition frequency Turn-on time Strage time Fall time VCE = −10 V, IC = −0.5 A, f = 1 MHz IC = −3 A, IB1 = −12 mA, IB2 = 12 mA VCC = −50 V 15 0.3 2 0.5 1 000 2 000 Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 Typ
E Max Unit V −2.5 −200 −200 −500 −500 −2 10 000 −2 −4 MHz µs µs µs V mA µA
(7.6)
V µA
Emitter-base cutoff current (Collector open) Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1
Publication date: March 2003
Q
P Note) The part number in the parenthesis shows conventional part number.
2 000 to 5 000 4 000 to 10 000
(1.5)
1
2
0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3
2.0±0.5
4.4±0.5
0 to 0.4
14.4±0.5
3.0+0.4 –0.2
1.5+0 –0.4
SJD00019BED
1
2SB0938, 2SB0938A
PC Ta
50 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W)
IC VCE
−6
−10
IC VBE
TC=25˚C
IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA –0.5mA
VCE=–3V
Collector power dissipation PC (W)
40
−5
−8
(1)
30
Collector current IC (A)
−4
Collector current IC (A)
−6
TC=100˚C
25˚C –25˚C
−3
–0.4mA –0.3mA –0.2mA
20
−4
−2
10
(2) (3)
0 0 40 80 120 160
−1
−2
0
0
−1
−2
−3
−4
−5
0
0
− 0.8
−1.6
−2.4
−3.2
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage.