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2SB938A Dataheets PDF



Part Number 2SB938A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SB938A Datasheet2SB938A Datasheet (PDF)

Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC .

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Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0938 2SB0938A VCEO VEBO IC ICP PC Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 °C °C V A A W V Unit V (6.5) Collector-emitter voltage 2SB0938 (Base open) 2SB0938A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. Internal Connection C B ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0938 2SB0938A 2SB0938 2SB09378 IEBO hFE1 hFE2 * Collector-emitter saturation voltage VCE(sat) fT ton tstg tf ICEO 2SB0938 2SB0938A VBE ICBO VCE = −3 V,IC = −3 A VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VCE = −30 V,IB = 0 VCE = −40 V,IB = 0 VEB = −5 V,IC = 0 VCE = −3 V, IC = −0.5 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA Transition frequency Turn-on time Strage time Fall time VCE = −10 V, IC = −0.5 A, f = 1 MHz IC = −3 A, IB1 = −12 mA, IB2 = 12 mA VCC = −50 V 15 0.3 2 0.5 1 000 2 000 Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 Typ E Max Unit V −2.5 −200 −200 −500 −500 −2 10 000 −2 −4 MHz µs µs µs V mA  µA (7.6) V µA Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Publication date: March 2003 Q P Note) The part number in the parenthesis shows conventional part number. 2 000 to 5 000 4 000 to 10 000 (1.5) 1 2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 2.0±0.5 4.4±0.5 0 to 0.4 14.4±0.5 3.0+0.4 –0.2 1.5+0 –0.4 SJD00019BED 1 2SB0938, 2SB0938A PC  Ta 50 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) IC  VCE −6 −10 IC  VBE TC=25˚C IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA –0.5mA VCE=–3V Collector power dissipation PC (W) 40 −5 −8 (1) 30 Collector current IC (A) −4 Collector current IC (A) −6 TC=100˚C 25˚C –25˚C −3 –0.4mA –0.3mA –0.2mA 20 −4 −2 10 (2) (3) 0 0 40 80 120 160 −1 −2 0 0 −1 −2 −3 −4 −5 0 0 − 0.8 −1.6 −2.4 −3.2 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base-emitter voltage.


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