Power Transistors
2SB0944 (2SB944)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For power switching Complemen...
Power
Transistors
2SB0944 (2SB944)
www.DataSheet4U.net
Silicon
PNP epitaxial planar type
For power switching Complementary to 2SD1269 ■ Features
Low collector-emitter saturation voltage VCE(sat) Satisfactory linearity of forward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw.
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −4 −8 35 2 150 −55 to +150 °C °C Unit V V V A A W
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC ...