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2SB945 Dataheets PDF



Part Number 2SB945
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SB945 Datasheet2SB945 Datasheet (PDF)

Power Transistors 2SB0945 (2SB945) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2.

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Power Transistors 2SB0945 (2SB945) www.DataSheet4U.net Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw. 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 40 2 150 −55 to +150 °C °C Unit V V V A A W 14.0±0.5 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −2 A IC = −4 A, IB = − 0.2 A IC = −4 A, IB = − 0.2 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A VCC = −50 V 30 0.13 0.50 0.13 45 60 260 − 0.5 −1.5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 R 60 to 120 Q 90 to 180 P 130 to 260 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00024BED 1 2SB0945 PC  Ta 50 IC  VCE Collector-emitter saturation voltage VCE(sat) (V) −8 −100 IB=–120mA TC=25˚C VCE(sat)  IC IC/IB=20 Collector power dissipation PC (W) 40 Collector current IC (A) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) –100mA −6 –80mA –60mA −10 30 (1) 20 −4 –40mA –30mA –20mA −1 25˚C TC=100˚C –25˚C −2 –10mA –3mA − 0.1 10 (3) (4) 0 0 40 (2) 80 120 160 0 0 −2 −4 −6 −8 −10 − 0.01 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat)  IC −100 IC/IB=20 hFE  IC 104 VCE=–2V fT  I C 104 VCE=–10V f=10MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE −10 103 TC=100˚C 25˚C Transition frequency fT (MHz) −10 103 25˚C −1 TC=–25˚C 100˚C 102 –25˚C 102 − 0.1 10 10 − 0.01 − 0.01 − 0.1 −1 −10 1 − 0.01 − 0.1 −1 1 − 0.01 − 0.1 −1 −10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob  VCB Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob 104 IE=0 f=1MHz TC=25˚C ton, tstg, tf  IC 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C Safe operation area −100 Non repetitive pulse TC=25˚C Collector current IC (A) 103 10 −10 ICP IC t=10ms t=1ms t=0.5ms 102 1 tstg ton −1 DC 10 0.1 tf − 0.1 1 − 0.1 −1 −10 −100 0.01 0 − 0.8 −1.6 −2.4 −3.2 − 0.01 −1 −10 −100 −1 000 Collector-base voltage VCB (V) Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00024BED 2SB0945 Rth  t 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink (1) Thermal resistance Rth (°C/W) 102 10 (2) 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00024BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communicatio.


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