2SB0947

Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm 0.7±0.1 ■ Features Low collector-emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0947 2SB0947A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −40 −50 −20 −40 −5 −10 −15 35 2 150 −55 to +150 °C °C V A A W V Unit V 16.7±0.3 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 Collector-emitter voltage 2SB0947 (Base open) 2SB0947A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0947 2SB0947A 2SB0947 2SB0947A IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time * Symbol VCEO ICBO Conditions IC = −10 mA, IB = 0 VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE ...