2SB950A

Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Parameter Collector-base voltage (Emitter open) 2SB0950 2SB0950A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 Unit V Solder Dip (4.0) ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 4.2±0.2 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 Collector-emitter voltage 2SB0950 (Base open) 2SB0950A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 5.08±0.5 V A A W B °C °C 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0950 2SB0950A 2SB0950 2SB0950A IEBO hFE1 hFE2 Collector-emitter saturation voltage * E Conditions Min −60 −80 −2.5 −200 −200 −500 −500 −2 1 000 1 000 10 000 −2 −4 20 0.3 2 0.5 V V MHz µs µs µs mA  µA Typ Max Unit V Symbol 2SB09...