2SB0951

Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A ■ Features High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0951 2SB0951A VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 45 2 150 −55 to +150 °C °C V A A W V Unit V 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 Collector-emitter voltage 2SB0951 (Base open) 2SB0951A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0951 2SB0951A 2SB0951 2SB0951A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VEB = −7 V, IC = 0 VCE = −3 V, IC = −4 A VCE = −3 V, IC = ...