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IDB06E60 Dataheets PDF



Part Number IDB06E60
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Fast Switching EmCon Diode
Datasheet IDB06E60 DatasheetIDB06E60 Datasheet (PDF)

IDP06E60 IDB06E60 Fast Switching EmCon Diode Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 6 1.5 175 P-TO220-2-2. V A V °C • 175°C operating temperature • Easy paralleling Type IDP06E60 IDB06E60 Package P-TO220-2-2. Ordering Code Q67040-S4480 Marking D06E60 D06E60 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4481 Maximum Ratings, at Tj.

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IDP06E60 IDB06E60 Fast Switching EmCon Diode Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 600 6 1.5 175 P-TO220-2-2. V A V °C • 175°C operating temperature • Easy paralleling Type IDP06E60 IDB06E60 Package P-TO220-2-2. Ordering Code Q67040-S4480 Marking D06E60 D06E60 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4481 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 600 14.7 10 Unit V A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave I FSM I FRM Ptot 29 22 W 46.9 26.6 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+175 255 °C °C Rev.2 Page 1 2003-07-31 IDP06E60 IDB06E60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 3.2 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=600V, Tj=25°C V R=600V, Tj=150°C Symbol min. IR VF - Values typ. max. Unit µA 1.5 1.5 50 500 V 2 - Forward voltage drop IF=6A, Tj=25°C IF=6A, Tj=150°C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDP06E60 IDB06E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C V R=400V, IF=6A, di/dt=550A/µs , Tj=125°C V R=400V, IF=6A, di/dt=550A/µs , Tj=150°C Symbol min. t rr I rrm Q rr S - Values typ. max. Unit ns 70 100 105 6.5 7.4 7.9 240 360 400 4 4.8 4.9 A nC - Peak reverse current V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C V R=400V, IF=6A, di/dt=550A/µs, Tj=125°C V R=400V, IF=6A, di/dt=550A/µs, Tj=150°C Reverse recovery charge V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C V R=400V, IF=6A, di/dt=550A/µs, Tj=125°C V R=400V, IF=6A, di/dt=550A/µs, Tj=150°C Reverse recovery softness factor V R=400V, IF=6A, di F/dt=550A/µs, Tj=25°C V R=400V, IF=6A, di F/dt=550A/µs, Tj=125°C V R=400V, IF=6A, di F/dt=550A/µs, Tj=150°C Rev.2 Page 3 2003-07-31 IDP06E60 IDB06E60 1 Power dissipation Ptot = f (TC) parameter: Tj ≤ 175 °C 50 2 Diode forward current IF = f(TC) parameter: Tj ≤ 175°C 16 W 40 A 12 35 P tot 30 25 20 15 10 IF 50 75 100 125 175 8 6 4 10 5 0 25 2 °C TC 0 25 50 75 100 125 °C TC 175 3 Typ. diode forward current IF = f (VF) 18 4 Typ. diode forward voltage VF = f (Tj) 2 A 14 12 V 1.8 1.7 12A VF IF -55°C 25°C 100°C 150°C 1.6 1.5 6A 10 8 1.4 6 4 2 0 0 1.3 3A 1.2 1.1 1 -60 0.5 1 1.5 V VF 2.5 -20 20 60 100 160 °C Tj Rev.2 Page 4 2003-07-31 IDP06E60 IDB06E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125°C 300 6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 °C 550 nC ns 12A 6A 3A 500 475 12A Qrr 200 450 425 400 375 6A trr 150 100 350 325 50 300 275 3A 0 200 300 400 500 600 A/µs 800 250 200 300 400 500 600 A/µs 800 di F/dt diF/dt 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125°C 11 8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125°C 11 A 9 9 12A 6A 3A 8 7 6 12A 6A 3A 7 5 6 4 3 2 4 1 300 400 500 600 5 3 200 S 800 8 Irr A/µs 0 200 300 400 500 600 700 800 di F/dt A/µs 1000 diF/dt Rev.2 Page 5 2003-07-31 IDP06E60 IDB06E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP06E60 K/W 10 0 ZthJC 10 -1 D = 0.50 10 -2 0.20 0.10 single pulse 10 -3 0.05 0.02 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2 Page 6 2003-07-31 IDP06E60 IDB06E60 TO-220-2-2 A P symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 N dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236 D U H B V E F W J G F G H J K L M N P T U V W 1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40 0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157 X L C M T K X Rev.2 Page 7 2003-07-31 IDP06E60 IDB06E60 TO-220-3-45 (P-TO220SMD) dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10..


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