Document
IDB10S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant
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Product Summary V DC Qc IF 600 24 10 V nC A
D2PAK
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<135 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 76 Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Rev. 2.1 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg
32 350 29 600 A2s V V/ns W °C 2009-01-07
VR=0…480V T C=25 °C
50 83 -55 ... 175
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IDB10S60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction - ambient SMD version, device on PCB, minimal Footprint SMD version, device on PCB, 6 cm2 cooling area3) reflow MSL1 1.8 62 K/W Values typ. max. Unit
-
35
-
Soldering temperature, reflowsoldering @ 10sec.
T sold
-
-
260
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.14 mA I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 1.4 1.7 2.1 140 µA V
V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time4) Total capacitance Qc tc C V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz
1) 2) 3)
-
5
1400
-
24 480 60 60
<10 -
nC ns pF
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertikal with out blown air.
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
5)
4)
Only capacative charge occuring, guaranteed by design. page 2 2009-01-07
Rev. 2.1
IDB10S60C
1 Power dissipation P tot=f(T C) 2 Diode forward current I F=f(T C); T j≤175 °C
100
25
80
20
60
15
P tot [W]
40
I F [A]
10 20 5 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175
T C [°C]
T C [°C]
3 Typ. forward characteristic I F=f(V F); t p=400 µs parameter: T j
30
100 °C 175°C
4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 µs; parameter: T j
120
-55 °C
100
25 °C 150 °C
20
80
175°C
I F [A]
I F [A]
60
25 °C
10
40
100 °C
20
150 °C
-55 °C
0 0 1 2 3 4
0 0 2 4 6 8
V F [V]
V F [V]
Rev. 2.1
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2009-01-07
IDB10S60C
5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
50
0.1 0.5
6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j
102
40
1
101
0.2
P F(AV) [W]
30
100
I R [µA]
20 10-1
175 °C
150 °C
100 °C -55 °C 25 °C
10
10-2
0 0 5 10 15 20 25
10-3 100
200
300
400
500
600
I F(AV) [A]
V R [V]
7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 °C, f =1 MHz
600
500
100
0.5
400
Z thJC [K/W]
0.2 0.1
C [pF]
10-4 10-3 10-2 10-1 100
300
10-1
0.02 0.01
200
100
single pulse
10-2 10-5
0 10-1 100 101 102 103
t P [s]
V R [V]
Rev. 2.1
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2009-01-07
IDB10S60C
9 Typ. C stored energy E C=f(V R) 10 Typ. Capacitive charge vs. current slope Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max
14
25
12 20 10 15
6
Q c [nC]
10 5 0 0 100 200 300 400 500 600 100 400 700 1000
E c [µC]
8
4
2
0
V R [V]
di F/dt [A/µs]
Rev. 2.1
page 5
2009-01-07
IDB10S60C
PG-TO220-3-45 (D2PAK): Outline
Dimensions in mm/inches Rev. 2.1 page 6 2009-01-07
IDB10S60C
Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warrant.