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IDB10S60C Dataheets PDF



Part Number IDB10S60C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description 2nd Generation thinQ SiC Schottky Diode
Datasheet IDB10S60C DatasheetIDB10S60C Datasheet (PDF)

IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diod.

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IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<135 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 76 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i²t value Repetitive peak reverse voltage Diode ruggedness dv/dt Power dissipation Operating and storage temperature Rev. 2.1 I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 32 350 29 600 A2s V V/ns W °C 2009-01-07 VR=0…480V T C=25 °C 50 83 -55 ... 175 page 1 IDB10S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction - ambient SMD version, device on PCB, minimal Footprint SMD version, device on PCB, 6 cm2 cooling area3) reflow MSL1 1.8 62 K/W Values typ. max. Unit - 35 - Soldering temperature, reflowsoldering @ 10sec. T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.14 mA I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 1.4 1.7 2.1 140 µA V V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time4) Total capacitance Qc tc C V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz 1) 2) 3) - 5 1400 - 24 480 60 60 <10 - nC ns pF J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. Device on 40mm*40mm*1.5mm epox PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertikal with out blown air. tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 5) 4) Only capacative charge occuring, guaranteed by design. page 2 2009-01-07 Rev. 2.1 IDB10S60C 1 Power dissipation P tot=f(T C) 2 Diode forward current I F=f(T C); T j≤175 °C 100 25 80 20 60 15 P tot [W] 40 I F [A] 10 20 5 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 T C [°C] T C [°C] 3 Typ. forward characteristic I F=f(V F); t p=400 µs parameter: T j 30 100 °C 175°C 4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 µs; parameter: T j 120 -55 °C 100 25 °C 150 °C 20 80 175°C I F [A] I F [A] 60 25 °C 10 40 100 °C 20 150 °C -55 °C 0 0 1 2 3 4 0 0 2 4 6 8 V F [V] V F [V] Rev. 2.1 page 3 2009-01-07 IDB10S60C 5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 °C, parameter: D =t p/T 50 0.1 0.5 6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j 102 40 1 101 0.2 P F(AV) [W] 30 100 I R [µA] 20 10-1 175 °C 150 °C 100 °C -55 °C 25 °C 10 10-2 0 0 5 10 15 20 25 10-3 100 200 300 400 500 600 I F(AV) [A] V R [V] 7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 °C, f =1 MHz 600 500 100 0.5 400 Z thJC [K/W] 0.2 0.1 C [pF] 10-4 10-3 10-2 10-1 100 300 10-1 0.02 0.01 200 100 single pulse 10-2 10-5 0 10-1 100 101 102 103 t P [s] V R [V] Rev. 2.1 page 4 2009-01-07 IDB10S60C 9 Typ. C stored energy E C=f(V R) 10 Typ. Capacitive charge vs. current slope Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max 14 25 12 20 10 15 6 Q c [nC] 10 5 0 0 100 200 300 400 500 600 100 400 700 1000 E c [µC] 8 4 2 0 V R [V] di F/dt [A/µs] Rev. 2.1 page 5 2009-01-07 IDB10S60C PG-TO220-3-45 (D2PAK): Outline Dimensions in mm/inches Rev. 2.1 page 6 2009-01-07 IDB10S60C Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warrant.


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