IDP18E120

IDP18E120 IDB18E120 Fast Switching EmCon Diode Feature 1200 V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage www.DataSheet4U.net Product Summary VRRM IF VF T jmax P-TO220-3.SMD 1200 18 1.65 150 P-TO220-2-2. V A V °C Easy paralleling Type IDP18E120 IDB18E120 Package P-TO220-2-2. Ordering Code Q67040-S4493 Marking D18E120 D18E120 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4387 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 1200 31 19.8 Unit V A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave I FSM I FRM Ptot 78 47 W 113 54 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+150 260 °C °C Rev.2 Page 1 2003-07-31 IDP18E120 IDB18E120 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 1.1 62 62 - Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current V R=1200V, T j=25°C V R=1200V, T j=150°C Symbol min. IR...