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IDB30E60

Infineon Technologies

Fast Switching Emitter Controlled Diode

FFaasstt SSwwiittcchhiinngg EEmmCittoenr DCioondterolled Diode Feature • 600VVEEmmitCteornCteocnhtrnoollleodgytechnology...


Infineon Technologies

IDB30E60

File Download Download IDB30E60 Datasheet


Description
FFaasstt SSwwiittcchhiinngg EEmmCittoenr DCioondterolled Diode Feature 600VVEEmmitCteornCteocnhtrnoollleodgytechnology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175°C operating temperature Easy paralleling IDB30E60 Product Summary VRRM IF VF Tjmax 600 30 1.5 175 V A V °C 2 1 3 PG-TO263-3 * RoHS compliant Type IDB30E60 Package PG-TO263-3 Ordering Code Marking Pin 1 PIN 2 PIN 3 - D30E60 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified PPaararammetetrer SymSybmobl ol RReeppeteittiivteivpeepakearekverersveevrosletagveoltage CCoonntintiunoouussfofrowrwaradrcdurcreunrrtent TTCC==2255°CC TTCC==9900°CC SSuurgrgeenonnornepreetpitievteitfiovrewfaordrwcaurrrdencturrent TC = 25C, tp = 10 ms, sine halfwave MTCax=i2m5u°mC, rtepp=e1t0itimves,fosrinwearhdalcfwurarveent TMC a=x2im5uCm, tprleimpietetditibvyetjf,moarxw, Dar=d0c.5urrent PToCw=e2r5d°Cis,stippalitmiointed by Tjmax, D=0.5 TPCo...




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