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IDC08S60CE Dataheets PDF



Part Number IDC08S60CE
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Schottky Diode
Datasheet IDC08S60CE DatasheetIDC08S60CE Datasheet (PDF)

IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.DataSheet4U.net • High surge current capability • Applications: • SMPS, PFC, snubber C A Chip Type IDC08S60CE VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafe.

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IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery www.DataSheet4U.net • High surge current capability • Applications: • SMPS, PFC, snubber C A Chip Type IDC08S60CE VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.658x 1.52 1.421 x 1.283 2.52 355 100 2682 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2 Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 IDC08S60CE Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current limited by Tvjmax Surge non repetitive forward current sine halfwave Repetitive peak forward current limited by Tvjmax Non-repetitive peak forward current Operating junction and storage temperature Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj , Tstg Tvj < 150°C TC =25° C , tP =10 ms TC = 100° C , Tvj = 1 50 ° C , D= 0 . 1 TC =25° C , t p = 1 0µs Condition Tvj = 25 °C Value 600 600 8 59 35 264 -55...+175 °C A Unit V Static Characteristics (tested on wafer) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R = 60 0 V IF=8A Tvj =25°C Tvj =25°C Value min. Typ. 1 1.5 max. 100 1.7 Unit µA V Dynamic Characteristics, at T v j = 25 °C, unless otherwise specified, tested at component Parameter Symbol Conditions Value min. Typ. 19 max. Unit Total capacitive charge QC IF <=IF,max di/dt=200A/µs VR=400V T v j = 1 50 °C nC Switching time 1) tc T v j = 1 50 °C VR=1V 310 50 50 <10 ns Total capacitance C f=1MHz V R = 30 0 V V R = 60 0 V pF 1) tc is the time constant for the capacitive displacement current waveform (independent from T v j , ILOAD and di/dt), different from trr which is dependent on T v j , ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 IDC08S60CE Chip drawing A A: Anode pad Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 IDC08S60CE Description AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 .


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