IDV02S60C

SiC Silicon Carbide Diode www.DataSheet4U.net 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C Data Sheet Rev. 2.0, 2010-05-31 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode IDV02S60C 1 Description The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying its patented diffusion soldering process for attaching the chip to the leadframe. The result is nearly identical thermal characteristics to those of the SiC diodes in the non-isolated TO220 package. Features Revolutionary semiconductor material - Silicon Carbide Nearly no reverse / forward recovery charge High surge current capability Fully isolated package with nearly similar Rth,jc as the standard T0220 Suitable for high temperature operation Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Switching behavior independent of forward current, switching speed and temperature Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Good thermal performance without the need for additional isolation layer and washer Enabling higher frequency / increased power density solution...