MD8IC970GNR1

Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg. Frequency 850 MHz 900 MHz 940 MHz www.DataSheet4U.net MD8IC970NR1 MD8IC970GNR1 850-940 MHz, 35 W AVG., 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Gps (dB) 30.6 31.9 32.6 PAE (%) 40.1 42.4 42.1 IMD (dBc) --30.5 --31.0 --31.3 CASE 1866-02 TO-270 WBL-16 PLASTIC MD8IC970NR1 Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ≃ 79 Watts CW Features Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters On--Chip Prematching. On--Chip Stabilization. Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 U...