MRF6V13250HSR3

Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications. Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB) --18 MRF6V13250HR3 MRF6V13250HSR3 1300 MHz, 250 W, 50 V LATERAL N-CHANNEL RF POWER MOSFETs Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C Signal Type CW Pout (W) 230 CW f (MHz) 1300 Gps (dB) 21.0 ηD (%) 55.0 IRL (dB) --17 at all Phase Angles www.DataSheet4U.net Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz 250 Watts Pulsed Peak Power, 10% Duty Cycle, 200 μsec CW Capable CASE 465-06, STYLE 1 NI-780 MRF6V13250HR3 Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Characterized from 20 V to 50 V for Extended Power Range Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case ...