PTFA180701F

PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz 5 50 Features 40 Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE performance - Average output power = 44 dBm - Gain = 16.5 dB - Efficiency = 40.5% - EVM = 2.0% Typical CW performance - Output power at P–1dB = 72 W - Gain = 15.5 dB - Efficiency = 59% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power 4 Efficiency EVM RMS (avg. %) . 3 30 Drain Efficiency (%) 2 20 1 10 EVM 0 30 32 34 36 38 40 42 44 46 0 Output Power, avg. (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 550 mA, POUT = 44 dBm, ƒ = 1836.6 MHz Characteristic Error Vector Magnitude Modulation Spectr...