PTFA182001E

PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz www.DataSheet4U.net Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz -25 45 Features Drain Efficiency (%) Pb-free, RoHS-compliant and thermally-enhanced package Broadband internal matching Typical EDGE performance at 1836.6 MHz, 30 V - Average output power = 50 dBm - Linear gain = 16.3 dB - Efficiency = 37% - EVM = 3.1% - 400 kHz modulation = –61 dBc - 600 kHz modulation = –76 dBc Typical CW performance, 1880 MHz, 30 V - Output power at P–1dB = 220 W - Efficiency = 49% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power Intermodulation Distortion (dBc) -30 -35 -40 -45 -50 -55 -60 -65 37 39 41 43 Efficiency IM3 IM5 40 35 30 25 20 15 IM7 10 5 45 47 49 51 53 55 Output Power, PEP (dBm) RF Characteristics Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1840 MHz,...