PTFA191001E

PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA191001E Package H-36248-2 PTFA191001F Package H-37248-2 Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion = –37 dBc - Adjacent channel power = –41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion = –35 dBc @ 1.2288 - Adjacent channel power = –51 dBm Typical CW performance, 1960 MHz, 30 V - Output power at P–1dB = 130 W - Efficiency = 56% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 100 W (CW) output power Efficiency IM3 (dBc), ACPR (dBc) -28 -33 30 25 IM3 -38...